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In this study we investigate strain effect in barriers of 1.3 μm AlGaInAs-InP uncooled multiple quantum welllasers.Single effective mass and Kohn-Luttinger Hamiltonian equations have been solved to obtain quantum states andenvelope wave functions in the structure.In the case of unstrained barriers,our simulations results have good agreementwith a real device fabricated and presented in one of the references.Our main work is proposal of 0.2% compressivestrain in the structure Barriers that causes significant reduction in Leakage current density and Auger current densitycharacteristics in 85℃.20% improvement in mode gain-current density characteristic is also obtained in 85℃.
In this study we investigate strain effect in barriers of 1.3 μm AlGaInAs-InP uncooled multiple quantum well lasers. Single effective mass and Kohn-Luttinger Hamiltonian equations have been solved to obtain quantum states andenvelope wave functions in the structure. The case of unstrained barriers, our simulations results have good agreement with a real device fabricated and presented in one of the references. Our main work is proposal of 0.2% compressive stress in the structure Barriers that causes significant reduction in Leakage current density and Auger current density characteristics in 85 ° C .20% improvement in mode gain-current density characteristic is also obtained at 85 ° C.