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本报告给出了73.2～74.4所做的关于估价微波功率晶体管失效机理的结果,并给出了这些器件预期的可靠性和寿命结果。根据详细的失效分析进行了一系列加速射频寿命试验。估价了金和铝两种金属化系统器件。早期的工作是在 MSC1315和 PHI1510器件上进行的。PHI 型金金属化器件可在340℃结温下工作长达2000小时而不失效。MSC 型铝金属化器件在250℃结温下工作800小时或在310℃结温下工作10小时失效。其主要失效机理是电徙动。
This report presents the results of 73.2-74.4 on failure mechanisms for evaluating microwave power transistors and shows the expected reliability and lifetime results for these devices. A series of accelerated RF lifetime tests were conducted based on detailed failure analysis. Valued the two gold and aluminum metallization system components. Earlier work was done on the MSC1315 and PHI1510 devices. PHI gold metallization devices can work at 340 ℃ junction temperature up to 2000 hours without failure. MSC type aluminum metallization devices work at a junction temperature of 250 ℃ for 800 hours or at a junction temperature of 310 ℃ for 10 hours. The main failure mechanism is electromigration.