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在建立瞬态光谱吸收系数模型的基础上,结合超快载流子动力学机制,建立了可以描述飞秒激光诱发直接带隙半导体瞬态漂白机制的理论模型,对飞秒激光诱发直接带隙半导体的瞬态漂白特性进行了数值仿真研究。结果表明,飞秒激光不仅可以诱发对应波长的瞬态漂白,还能导致激发波长到半导体长波限的宽光谱范围的瞬态漂白,且波长越长漂白现象越明显,甚至会引发能带底部出现负吸收现象。
Based on the model of transient absorption coefficient and the superfast carrier dynamics, a theoretical model describing the transient bleaching mechanism of direct-band-gap semiconductor induced by femtosecond laser was established, and the direct band gap induced by femtosecond laser Semiconductor transient bleaching characteristics of the numerical simulation. The results show that the femtosecond laser can not only induce the transient bleaching of the corresponding wavelength, but also lead to the transient bleaching in the wide spectral range from the excitation wavelength to the long wavelength of the semiconductor. The longer the wavelength, the more obvious the bleaching phenomenon will occur, Negative absorption phenomenon.