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在本征硅片表面设计并制作了一种圆柱孔形抗反射微结构。基于严格耦合波分析方法,通过数值计算及模拟仿真确定了微结构最优参数组合,设计反射率小于3%。应用二元曝光、湿法腐蚀和反应离子刻蚀技术制作了单面和双面抗反射周期阵列微结构。根据测试结果判断反应气体流量、射频功率及工作气压等工艺参数对微结构形貌及侧壁陡直度具有很大影响,经过实验分析确定了最佳工艺参数组合。采用热场发射扫描电子显微镜和白光干涉仪对该结构进行形貌表征,利用显微成像红外光谱仪对其反射率进行测量。最终结果表明,相比于单面微结构和无结构本征硅片,双面微结构抗反射效果最好,得到反射率为8%左右,基本达到抗反射设计要求。
A cylindrical aperture anti-reflection microstructure was designed and fabricated on the surface of intrinsic silicon wafer. Based on the rigorous coupled-wave analysis method, the optimal microstructure parameters were determined by numerical calculation and simulation. The designed reflectance was less than 3%. Single and double-sided anti-reflection periodic array microstructures were fabricated by binary exposure, wet etching and reactive ion etching. According to the test results, the parameters of reaction gas flow rate, RF power and working pressure were determined to have a great influence on microstructure morphology and sidewall steepness. The optimum process parameters were determined through experimental analysis. The structure was characterized by thermal field emission scanning electron microscopy and white light interferometer, and its reflectivity was measured by microscopic imaging infrared spectrometer. The final results show that the anti-reflective effect of the double-sided microstructures is the best compared with the single-sided microstructures and the unstructured intrinsic silicon wafers, and the reflectivity is about 8%, basically meeting the anti-reflective design requirements.