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X射线光电子能谱测试(XPS)分析C(膜)/Si(SiO2)(纳米微粒)/C(膜)样品发现:把400℃退火后的样品继续加热到650℃并退火1h后,样品中除原有的Si晶体外,生成了SiC晶体,同时还出现了SiO2晶体,这表明一部分Si与C反应生成SiC的同时,氧气的氧化作用占主导地位,把大部分Si氧化成了SiO2.对比分析在650℃和750℃退火后样品的Raman谱发现:随着加热温度的升高,SiC与Si含量增加而SiO2含量减少.这表明:在750℃时,C原子的还原作用继400℃后再次占主导地位,又把一部分SiO2还原成Si.
X-ray photoelectron spectroscopy (XPS) analysis of C (film) / Si (SiO2) (nanoparticle) / C (film) samples found that after annealing the sample at 400 ° C to 650 ° C and annealing for 1 h, In addition to the original Si crystals, SiC crystals were formed and at the same time, SiO2 crystals appeared, indicating that part of the Si reacts with C to form SiC while the oxidation of oxygen dominates and most of the Si is oxidized to SiO2. The Raman spectra of samples annealed at 650 ℃ and 750 ℃ showed that the content of SiC and Si increased and the content of SiO2 decreased with the increase of heating temperature.This shows that the reduction of C atom at 750 ℃ Once again dominated, again part of the SiO2 reduction into Si.