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用真空热壁法生长了一种新型全有机复合薄膜TTF/m NBP(tetrathiofulvalene/m ni trobenzylidenepropanedinitrile)。用透射电子显微镜和傅立叶变换红外光谱对薄膜的表征结果证明 ,该制备方法能够生长出较大面积的化学结构完善的单晶薄膜。用原子力显微镜 (AFM )和扫描隧道显微镜 (STM )都观察到了TTF/m NBP薄膜表面的原子级分辨像。通过STM针尖施加脉冲电压在TTF/m NBP薄膜上实现了纳米级的信息存储 ,最小记录点直径约为 1 2nm。扫描隧道谱分析表明TTF/m NBP薄膜具有很好的电开关“记忆”特性。初步研究认为其电开关机制可能主要是脉冲电压诱发的TTF电子给体与m NBP电子受体分子间的电荷转移的变化所致。
A novel all-organic thin film TTF / m NBP (tetrathiofulvalene / mni trobenzylidenepropanedinitrile) was grown by vacuum hot wall method. Characterization of the films by transmission electron microscopy and Fourier transform infrared spectroscopy demonstrated that the method can grow a large area of a single crystal thin film with a well-defined chemical structure. Atomic resolution images of the surface of the TTF / m NBP film were observed with both atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Pulsed voltage was applied through the tip of the STM to achieve nanoscale information storage on the TTF / m NBP film, with a minimum recorded dot diameter of approximately 12 nm. Scanning tunneling spectroscopy shows that TTF / m NBP films have good “memory” characteristics of electrical switches. Preliminary studies suggest that the electrical switching mechanism may be mainly caused by the change of charge transfer between pulse voltage-induced TTF electron donor and m NBP electron acceptor molecule.