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通过对MBE工艺中影响GaAs和AlGaAs材料质量的生长关键工艺实验研究,优化了MBE生长AlxGa1-xAs/GaAs调制掺杂结构工艺。用GEN-ⅡMBE设备生长AlxGa1-xAs/GaAs调制掺杂结构材料,得到了高质量的AlxGa1-xAs/GaAs调制掺杂结构材料。用范德堡法研究材料特性,得到材料参数的典型值:二维电子气浓度在室温时为5.6×1011cm-2,电子迁移率为6000cm2/V·s;在77K低温时浓度达3.5×1011cm-2,电子迁移率为1.43×105cm2/V·s。用C-V法测量其浓度分布表明,分布曲线较陡。典型的器件应用结果为:单管室温直流跨导达280mS/mm,在12GHz时均有8dB以上的增益。
Through the experimental study on the key growth processes that affect the quality of GaAs and AlGaAs materials in the MBE process, the optimized AlxGa1-xAs / GaAs doped structure was optimized. AlxGa1-xAs / GaAs modulation doped structure material was grown by GEN-ⅡMBE device, and high quality AlxGa1-xAs / GaAs modulation doped structure material was obtained. The properties of the materials were studied by the method of Vanderbilt, and the typical values of the material parameters were obtained: the two-dimensional electron gas concentration was 5.6 × 10 11 cm -2 at room temperature and the electron mobility was 6000 cm 2 / V · s; at 77 K, the concentration reached 3.5 × 10 11 cm -2, and the electron mobility is 1.43 × 10 5 cm 2 / V · s. The C-V method to measure the concentration distribution shows that the distribution curve is steep. Typical device application results: single-tube RTD 280mS / mm, at 12GHz have more than 8dB gain.