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依照缺陷势垒模型 ,将压敏电阻器视为双向导通的二极管 ,应用半导体理论对低电压情况下的电流 -电压关系数据进行了处理 ,得到了 Sn O2 - Zn O- Nb2 O5压敏材料的势垒电压。选取的 4个测量温度得到的结果是相同的 ,保证了实验结果的正确性。
According to the defect barrier model, the varistor is regarded as bidirectional conducting diode. The semiconductor-based theory is used to deal with the current-voltage relationship data under low voltage. The Sn O2 - Zn O-Nb2O5 pressure-sensitive material Of the barrier voltage. The results of the four measured temperatures obtained are the same, to ensure the correctness of the experimental results.