对高占空比、高功率线阵二极管激光器的封装技术进行了研究 ,给出了封装器件性能测试结果 :在占空比 2 0 % ( 2 0 0μs,1 0 0 0 Hz)时获得峰值功率大于 4 0 W的激光输出 ,1 0 0～ 1 0 0 0 Hz重复频率下 ,输出激光中心波长为 80 5～ 80 8nm,谱线宽度 3 .2～ 4 .2 nm,激光起伏小于 1 %。 The packaging technology of diode laser with high duty cycle and high power is studied. The results of the package performance test are given. The peak power is obtained when the duty cycle is 20% (200 μs, 100 000 Hz) When the laser output is greater than 40 W, the output laser center wavelength is 80 5 ~ 80 8 nm, the spectral width is 3.2 ~ 4.2 nm, and the laser fluctuation is less than 1% at the repetition frequency of 100 ~ 100 Hz.