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用粉体制备和高温熔凝工艺在ｎ＜１１１＞型单晶硅基片上制备了非晶态态ＳｉＯ２－ＺｎＯ－Ｂ２Ｏ３复合膜驻极体，实现对ＳｉＯ２薄膜驻极体的改性，恒栅压电晕充电、等温表面电位衰减及热刺激放电（ｔｈｅｒｍａｌｌｇ ｓｔｉｍｕｌａｔｅｄ ｄｉｓｃｈａｒｇｅｄ， ＴＳＤ）实验表明， Ｂ~３＋、Ｚｎ~２＋的掺杂对 ＳｉＯ２薄膜驻极体的电荷动态特性有较大影响： ＴＳＤ放电电流峰稳定于 ｔ＝２３８℃处，峰位不随充电温度和充电电压变化；正、负 ＴＳＤ电流谱关于温度轴对称．用离子掺杂可以有效地改变ＳｉＯ２薄膜驻极体内的微观网络结构，影响其电荷贮存性能。
An amorphous SiO2-ZnO-B2O3 composite film electret was prepared on a n <111> -type monocrystalline silicon substrate by powder preparation and high temperature fusion process to modify the SiO2 film electret. The corona charge, isothermal surface potential decay and thermo-stimulated discharged (TSD) experiments show that the doping of B 3+ and Zn 2+ has a significant effect on the charge dynamic characteristics of the SiO2 thin film electret: TSD discharge The current peak is stable at t = 238 ° C and the peak position does not change with the charging temperature and charging voltage; the positive and negative TSD current spectra are symmetrical about the temperature axis. Doping with ions can effectively change the micro-network structure of the SiO2 film electret, affecting its charge storage performance.