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薄膜磊晶成长在近年来为一颇受注目之研究课题。以往曾有报导在铁/矽系统中,α相铁在30℃得在氢氟酸清洁之(111)矽晶上以磊晶方式成长。其方位关系为[111]α—Fe∥[111]si及(110)α—Fe∥(220)Si。至於铜在(111)矽晶上磊晶成长,则发现(111)Cu面与(111)Si面相对转了30°。本文报导以穿透式电子显微镜探讨铜与铁薄膜在(111)矽晶上磊晶成长的结果。将300埃厚之铜或铁薄膜在超高真空状态下於室温以电子枪蒸镀於经特殊处理(111)矽晶面上,利用一点与点间解析度为1.8埃之400仟伏穿透式电子显微镜检视平视及横截面试片。
Film epitaxial growth in recent years as a well-known research topic. It has been previously reported that in iron / silicon systems, α-phase iron grows epitaxially on hydrofluoric acid-cleaned (111) silicon at 30 ° C. The orientation relationship is [111] α-Fe // [111] si and (110) α-Fe // (220) Si. As copper was epitaxially grown on (111) silicon, it was found that the (111) Cu surface turned 30 ° relative to the (111) Si surface. This paper reports the results of epitaxial growth of copper and iron films on (111) silicon by means of a transmission electron microscope. A 300-angstrom-thick copper or iron thin film was electronically deposited on a specially-treated (111) silicon surface at room temperature under an ultra-high vacuum. Using a 400-kV pass-through Electron microscopy Horizons and cross-section test strips.