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应用光热电离光谱方法研究了 MBE生长 Ga As薄膜中 Be受主的杂质能级 .通过与理论计算的比较 ,将观测到的 3个跃迁峰归属于 G线、C线和 D线跃迁 ,同时在实验上也观察到 Be受主 1s3/ 2 (Γ+ 8)态到 2 p1 / 2 (Γ- 6 )态跃迁 ,由实验结果算得 Be受主的电离能为 2 8.6 me V.
The photoluminescence ionization spectroscopy was used to study Be acceptor impurity levels in GaAs films grown by MBE. By comparing with the theoretical calculations, the observed three transition peaks belong to the G, C and D transitions, In the experiment, we also observed the transition from 1s3 / 2 (Γ + 8) state to 2 p1 / 2 (Γ- 6) state in Be acceptor. The experimental results show that the Be acceptor energy is 2 8.6 meV.