电离辐射在 MOS结构的 Si O2 层中建立正陷阱电荷 ,这些正陷阱电荷在正强栅偏压( + 2 0 V)下迅速减少 ,这是由于正栅压引起硅衬底中的电子向 Si O2 层隧道注入 ,从而与陷阱正电荷复合 .正栅压退火不仅对 N沟 MOS结构非常有效 ,对 P沟 MOS结构也有一定的影响 .给出了辐照后的 NMOS和 PMOS晶体管在强正栅压下退火的实验结果 ,阐明了正栅压下的“隧道退火”机理 . Ionizing radiation creates positive trap charges in the Si O2 layer of the MOS structure, which rapidly decrease at a positive gate bias (+20 V) due to the positive gate voltage that causes the electrons in the silicon substrate to flow toward the Si O2 layer tunneling, so as to be combined with the trap positive charge.The positive gate-pressure annealing is not only effective for N-channel MOS structure but also has some influence on the P-channel MOS structure.After the NMOS and PMOS transistors are irradiated, The experimental results of the reduction of annealing, clarified the mechanism of “tunnel annealing” under positive grid pressure.