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采用乙醛酸代替有害的化学药品 (如甲醛 )作为还原剂的化学镀技术 ,在工业纯铝片、工业纯钛片、以TiN作为扩散防护层的硅片和以TiSiN作为扩散防护层的硅片等难镀材料实现了化学镀铜。被覆铜镀层的表面形貌和晶粒结构的分析结果表明 :不同基材对铜镀层的组织结构影响很大 ,尤其在以TiN作为扩散防护层的硅片和以TiSiN作为扩散防护层的硅片上 ,获得了由平均尺寸为 5 0nm的颗粒所构成的较精细镀层 ,为半导体器件采用铜金属化工艺提供了新的方法。
Electroless plating technique using glyoxylic acid instead of harmful chemicals (such as formaldehyde) as a reducing agent is used in industrial pure aluminum flakes, industrial pure titanium flakes, silicon wafers with TiN as a diffusion barrier, and silicon with TiSiN as a diffusion barrier Plates and other materials difficult to achieve electroless copper plating. The results of surface morphology and grain structure analysis show that different substrates have a great influence on the microstructure of copper plating, especially in the silicon with TiN diffusion protection and the silicon with TiSiN diffusion protection , A finer coating of particles having an average size of 50 nm was obtained, providing a new method for using copper metallization on semiconductor devices.