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光电子学的迅速发展使科学界对金刚石(带隙为5.5eV)和SiC(3C-SiC和6H-SiC的带隙分别为2.2和2.9eV)等宽禁带半导体材料的研究和应用日趋活跃。近来,某些宽禁带Ⅲ-Ⅴ族氮化物半导体材料也引起人们浓厚的兴趣,其中研究最多的是GaN和Al_2Ga_(1-x)N。GaN是一种直接带隙半导体材料,其晶格结构
With the rapid development of optoelectronics, the research and application of the wide band gap semiconductor materials such as diamond (band gap of 5.5 eV) and SiC (band gap of 2.2 GHz and 2.9 eV for 3C-SiC and 6H-SiC respectively) has been made increasingly active by the scientific community. Recently, some wide bandgap group III-V nitride semiconductor materials have also aroused great interest. Among them, the most studied are GaN and Al 2 Ga 1-x N. GaN is a direct bandgap semiconductor material with a lattice structure