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报道了一种新的适用于在绝缘衬底上生长金刚石薄膜的方法,利用在直流电压上叠加交流成分,作为微波等离子体的电场偏置,成功地在SiO_2衬底上首次实现了>10~8cm~(-2)的金刚石成核。实验结果表明,金刚石薄膜的成核密度与偏压中交流信号的频率和幅度以及直流信号的幅度存在密切的关系。
A new method for growing diamond films on insulating substrates is reported. By superimposing alternating current (DC) voltage on the DC voltage and using it as an electric field bias for microwave plasma, 8cm ~ (-2) diamond nucleation. The experimental results show that the nucleation density of the diamond film is closely related to the frequency and amplitude of the AC signal and the amplitude of the DC signal in the bias voltage.