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晶圆键合强度是影响高g MEMS压阻式加速度传感器输出特性的主要因素之一。在200℃,200~800 V条件下完成硅-玻璃阳极键合实验,利用数字拉力机来表征不同参数条件下阳极键合强度,并用Matlab软件对实验数据进行处理,得到键合强度与键合晶圆厚度、键合电压之间的关系曲线;根据键合强度曲线选择最佳阳极键合工艺参数组合,对实验室自研的量程为150 000g的加速度传感器进行硅-玻璃阳极键合和冲击测试。通过分析测试结果,得到使高g压阻式加速度传感器具有较高输出灵敏度的键合参数。
Wafer bonding strength is one of the main factors that affect the output characteristics of high-g MEMS piezoresistive accelerometers. At 200 ℃ and 200 ~ 800 V, the silicon-glass anode bonding experiment was completed. The digital tensile strength was used to characterize the anode bonding strength under different parameters. The experimental data was processed by Matlab software to obtain the bonding strength and bonding Wafer thickness and bonding voltage. According to the bonding strength curve, the best combination of anode bonding parameters was selected, and silicon-glass anodic bonding and impact were measured on the laboratory self-developed acceleration sensor with a measuring range of 150 000 g test. By analyzing the test results, we get the bonding parameters that make high-g piezoresistive accelerometers have higher output sensitivity.