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对1.55μm波长DFB结构的In Ga As P多量子阱激光二极管开展电子和60Co-γ射线辐照试验。试验结果表明,激光二极管的斜度效率主要受带电粒子沉积的电离总剂量影响,而阈值电流和光功率主要受位移损伤剂量的影响。利用位移损伤剂量方法评价激光二极管的辐射损伤特征,并且预测其在空间辐射环境中的光功率衰退情况。模拟计算结果表明,MEO轨道辐射环境对激光二极管光功率辐射损伤远大于GEO轨道的影响,这主要是由于MEO轨道辐射环境的高能电子通量密度远大于GEO轨道的通量密度。
Electron and 60Co-γ-ray irradiation experiments were carried out on In Ga As P MQW laser diodes with 1.55μm wavelength DFB structure. The experimental results show that the slope efficiency of the laser diode is mainly affected by the total ionization dose of charged particle deposition, while the threshold current and optical power are mainly affected by the displacement damage dose. Displacement damage dose method is used to evaluate the laser diode radiation damage characteristics, and predict its optical power decline in space radiation environment. The simulation results show that the radiation damage of MEO orbital is much larger than that of GEO, which is mainly due to the fact that the high-energy electron flux density of MEO orbital radiation environment is much larger than the flux density of GEO orbitals.