采用Ｘ射线光电子能谱（ＸＰＳ）研究了由ＧａＡｓ和ＳｉＯ２组成的复合靶共溅射沉积的ＧａＡｓ－ＳｉＯ２复合薄膜的Ｇａ、Ａｓ和Ｓｉ的化学结合状态及其沉积时的基片温度对其影响。结果表明：Ｇａ、Ａｓ和Ｓｉ分别主要是以ＧａＡｓ和ＳｉＯ２的化学组态存在于复合薄膜之中，但当沉积时基片温度上升到一定值后（我们实验中为４００℃），有部分的Ｇａ和Ａｓ被氧化，其氧化量随着基片温度的进一步升高而上升。沉积的ＳｉＯ２中存在着少量的缺氧缺位。 X-ray photoelectron spectroscopy (XPS) was used to study the chemical bonding states of Ga, As and Si co-sputtered GaAs-SiO2 composite films composed of GaAs and SiO2 and the influence of substrate temperature . The results show that Ga, As and Si are mainly present in the composite films with the chemical structures of GaAs and SiO2, respectively. However, when the substrate temperature is increased to a certain value (400 ℃ in our experiment) Ga and As are oxidized, and their oxidation amount increases as the substrate temperature further increases. There is a small amount of hypoxia vacancies in the deposited SiO2.