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并五苯薄膜和单晶晶体管研究是目前有机电子学研究领域的热点.本文通过实验和理论模型系统研究了并五苯有机小分子薄膜的初始生长层形貌结构对有机薄膜晶体管器件电学性能的影响.提出单层薄膜二维晶粒边界模型,揭示了初始生长层晶粒大小对晶体管器件载流子迁移率及栅极偏压下阈值电压移动量的影响.同时,通过理论拟合计算得出有机晶体管器件结构在现有实验条件中的一些重要参数,如晶粒单畴中的迁移率、晶粒边界中缺陷浓度和缺陷势垒高度等.这些知识加深了对薄膜结构与器件性能之间关联的理解,为进一步改善并五苯薄膜晶体管器件性能提出明确的方向.此外,本文还提出一种新的并五苯单晶生长方法,即从并五苯单层膜在惰性常压气氛中熟化开始,通过两步法生长出高质量大尺寸的并五苯单晶.我们系统探讨了并五苯单层膜向单晶转变时的分子热力学、动力学过程,为后续单晶体器件的研究奠定了基础.
Pentacene thin film and single-crystal transistor are the hot topics in the field of organic electronics.In this paper, we systematically studied the electrical properties of organic thin-film transistor devices by using the morphology of the initial growth layer of pentacene organic small molecule thin films through experimental and theoretical models The influence of the initial grain size of the grown layer on the carrier mobility of the transistor device and the threshold voltage shift under the gate bias is revealed.At the same time, Some important parameters of the structure of organic transistor devices in the existing experimental conditions, such as the mobility in single grain boundaries, the concentration of defects in the grain boundary and the height of the defect barrier, etc., have deepened the understanding of the structure and device properties The relationship between understanding, in order to further improve the performance of pentacene thin film transistor devices put forward a clear direction.In addition, this paper also proposed a new pentacene single crystal growth method, that is, from the pentacene monolayer film in an inert atmosphere In the beginning of maturation, two-step method to grow high-quality large-size pentacene single crystal we systematically discussed the conversion of pentacene monolayer to monocrystalline Sub-thermodynamics, kinetics process, laid the foundation for the subsequent single-crystal device research.