半导体材料的激光化学气相淀积即光CVD(Pheto-Chemical Vaporous Deposition)是近几年发展起来的低温淀积技术。它具有淀积温度低、薄膜均匀、光电性能优良、选择性好和易于控制等特点。本文着重于介绍光CVD的原理、特点、工艺、设备及在氢化非晶硅、二氧化硅、氮化硅及其它半导体材料中的应用。 Laser Chemical Vapor Deposition (CVD) of semiconductor materials (Pheto-Chemical Vaporous Deposition) is a low-temperature deposition technique developed in recent years. It has the characteristics of low deposition temperature, uniform film, excellent photoelectric properties, good selectivity and easy control. This article focuses on the principles, characteristics, processes, equipment, and applications of optical CVD in hydrogenated amorphous silicon, silicon dioxide, silicon nitride, and other semiconductor materials.