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采用了等离子体增强化学气相沉积法(Plasma-EnhancedChemicalVaporDeposition,PECVD)在聚酰亚胺(Polyimide,PI)牺牲层上生长氮化硅薄膜;利用微旋转结构测量氮化硅薄膜的残余应力;讨论沉积温度、射频功率、反应气体流量比等工艺参数对氮化硅薄膜的残余应力的影响,并把薄膜的残余应力分为热应力和本征应力加以分析,得出适合制作射频MEMS开关器件中的桥式梁的氮化硅薄膜的最佳工艺条件.
A silicon nitride film is grown on a sacrificial layer of polyimide (PI) by plasma-enhanced chemical vapor deposition (PECVD); the residual stress of the silicon nitride film is measured by a micro-rotation structure; the deposition Temperature, rf power, reactive gas flow ratio and other process parameters on the residual stress of silicon nitride film, and the residual stress of the film is divided into thermal stress and intrinsic stress analysis, resulting for the manufacture of RF MEMS switching device The optimum conditions of the bridge beam silicon nitride film.