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利用Al_AlN_Si(111)MIS结构电容_频率谱研究了金属有机化学气相沉积法生长的Si基AlN的AlN_Si异质结构中的电荷陷阱态 .揭示了AlN_Si异质结构界面电荷陷阱态以及AlN层中的分立陷阱中心 .结果指出 :AlN层中存在Et-Ev=2 5 5eV的分立陷阱中心 ;AlN_Si界面陷阱态在Si能隙范围内呈连续分布 ,带中央态密度最低 ,Nss为 8× 10 1 1 eV- 1 cm- 2 ,对应的时间常数τ为 8× 10 - 4s ,俘获截面σn 为 1 5 8× 10 - 1 4cm2 ;在AlN界面层存在三种陷阱态 ,导致Al_AlN_Si异质结构积累区电容的频散
The charge-trap states in AlN_Si heterostructures of Si-based AlN grown by metal-organic chemical vapor deposition have been investigated by capacitance-frequency spectra of Al_AlN_Si (111) MIS structure. The interfacial charge trapping states of AlN_Si heterostructures and the AlN The results show that: there is a discrete trap center of Et-Ev = 255eV in the AlN layer; the trap state of AlN_Si interface is continuously distributed in the Si gap, with the lowest central state density, Nss is 8 × 10 11 eV- 1 cm-2, the corresponding time constant τ is 8 × 10-4s, and the capture cross-section σn is 1.58 × 10-1 4cm2. There are three kinds of trap states in the AlN interface layer, resulting in the accumulation of Al_AlN_Si heterostructure capacitance The dispersion