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我们对 Si O2 覆盖退火增强 In Ga As/In Ga As P/In P激光器材料量子阱混合技术进行了实验研究 .相对于原始样品 ,退火时无 Si O2 覆盖的样品经 80 0℃ ,30 s快速退火后 ,其光致发光谱的峰值波长“蓝移”了 7nm,退火时有 Si O2 覆盖的样品经过同样的快速退火后 ,其光致发光谱的峰值波长“蓝移”了 56nm.即在同一片子上实现了在需要量子阱混合的区域带隙的“蓝移”足够大的同时 ,不希望量子阱混合的区域能带结构的变化创记录的小 .本文认为增大量子阱的宽度、采用无应力的量子阱结构以及引入足够厚的缓冲层可以改善量子阱材料的晶格质量 ,有利于提高量子阱混合技术的可靠性与重复性 ,改善量子阱材料的热稳定性 .
We performed an experimental study on the quantum well hybridization of In Ga As / In GaAs P / In P laser with Si O2 coverage enhancement.Compared with the original sample, the samples without Si O2 after annealing annealed at80 ℃, 30 s After annealing, the peak wavelength of the photoluminescence spectrum was “blue-shifted” by 7 nm, and the peak wavelength of the photoluminescence spectrum was “blue-shifted” by 56 nm after the Si02-covered sample annealed with the same rapid annealing In the same film, it is realized that the band gap in the region where the quantum well is mixed is large enough and the change of the band structure in the region where the quantum well is mixed is not expected to be small. This paper suggests that increasing the width of the quantum well, The use of a stress-free quantum well structure and the introduction of a sufficiently thick buffer layer can improve the lattice quality of the quantum well material, improve the reliability and repeatability of the quantum well mixing technique, and improve the thermal stability of the quantum well material.