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基于中国科学院微电子研究所开发的0.35μm SOI工艺,制备了深亚微米抗辐照PD-SOI H型栅nMOSFET。选取不同沟道宽度进行加速应力实验。实验结果表明,热载流子效应使最大跨导变化最大,饱和电流变化最小,阈值电压变化居中。以饱和电流退化10%为失效判据,采用衬底/漏极电流比率模型,对器件热载流子寿命进行估计,发现同等沟道长度下,沟道越宽的器件,载流子寿命越短。
Based on the 0.35μm SOI process developed by the Institute of Microelectronics, Chinese Academy of Sciences, a deep submicron anti-radiation PD-SOI H-type gate nMOSFET was fabricated. Select different channel width for accelerated stress experiments. Experimental results show that the hot carrier effect maximizes the maximum transconductance, the minimum saturation current, and the threshold voltage. Taking the 10% degradation of saturation current as the criterion of failure, the substrate / drain current ratio model is used to estimate the hot carrier lifetime of the device. It is found that the device with the same channel length and wider channel has a longer carrier lifetime short.