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本文叙述反射式ＧａＡｓ负电子亲和势（ＮＥＡ）光电阴极的激活工艺已制备出积分灵敏度为４４０～１１７７μＡ／ｌｍ的光电阴极。文中讨论了对ＮＥＡ光电阴极稳定性的影响因素，铯和氧的作用，以及ＮＥＡ的形成机理。
This article describes the reflective GaAs negative electron affinity (NEA) photocathode activation process has been prepared with a sensitivity of 440 ~ 1177μA / lm photocathode. In this paper, the factors affecting the stability of NEA photocathode, the action of cesium and oxygen, and the formation mechanism of NEA are discussed.