美国IBM公司最近开发了一种可以把LSI的工作速度提高35%的工艺技术,计划在2003年前实现实用化。据称,该技术可以使构成MOS晶体管沟道的Si膜的晶格发生畸变从而实现高速化。在发生畸变的Si膜中,为了减少电子的散射和降低有效质 IBM of the United States recently developed a process technology that can increase LSI’s operating speed by 35% and plans to put it into practical use before 2003. It is said that this technique can make the crystal lattice of the Si film constituting the channel of the MOS transistor distorted and achieve high speed. In the distortion of the Si film, in order to reduce the scattering of electrons and reduce the effective quality