研究了用微波电子回旋共振(ECR)技术蒸发镀Ti膜、Cu膜。沉积速率达50.0nm/min左右,基片温度50～150℃。获得了附着力强的非晶态模层,进行了ECR溅射镀膜。采用较高的等离子体密度、电离度及负的基片电位,制作了Y-Ba-Cu-O超导薄膜。该膜层致密,呈非晶态,膜厚1.0μm,沉积速率达10.0nm/min。结果表明,ECR等离子体沉淀技术是能够在低压下产生高密度、高电离度的等离子体,这种等离子体是薄膜沉积工艺和表面处理技术中最合适的等离子体源。 The Ti film and Cu film were deposited by microwave electron cyclotron resonance (ECR) technique. Deposition rate of 50.0nm / min or so, the substrate temperature of 50 ~ 150 ℃. Obtained a strong adhesion of non-crystalline mold, ECR sputter coating. Y-Ba-Cu-O superconducting thin films were fabricated by using higher plasma density, ionization degree and negative substrate potential. The film is dense, amorphous, film thickness 1.0μm, the deposition rate of 10.0nm / min. The results show that the ECR plasma deposition technology is able to generate high-density, high-ionization plasma at low pressure, which is the most suitable plasma source in thin film deposition and surface treatment technologies.