【摘 要】
：
SrBi4-xFexTi4O15 (SBFT-x) thin films (x = 0.00, 0.05, 0.08, 0.15) have been synthesized on Pt/Ti/SiO2/Si (100)substrates by sol-gel method. This paper finds tha
【机 构】
：
College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China
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SrBi4-xFexTi4O15 (SBFT-x) thin films (x = 0.00, 0.05, 0.08, 0.15) have been synthesized on Pt/Ti/SiO2/Si (100)substrates by sol-gel method. This paper finds that Fe-doping does not change the crystal structure of SrBi4Ti4O15(SBTi). The coercive filed (Ec) and remnant polaxisation (Pr) increase at first, then decrease with the increase of Fe doping content. At a maximum applied field of 229 kV/cm, the 2Pr reaches a maximum value of 91.1 μC/cm2 at x=0.05 and the corresponding Ec is 72 kV/cm. The 2Pr increases by about 260% and the Ec decreases by about 6%, respectively. Obviously, the ferroelectric property of SrBi4Ti4O15 is greatly enhanced by Fe doping. The fatigueendurance characteristic of the SBFT-0.05 is not improved. After 1.1×109 read/write cycles at a frequency of 50 kHz,the nonvolatile polarisations (Pnv= P* - P^) decreused about 48% of its initial value.
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