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使用直流辉光等离子体辅助反应蒸发法沉积了ＩＴＯ透明导电膜。通过膜的霍尔系数测量及ＸＲＤ、ＳＥＭ分析，详细研究了沉积时的基片温度对膜的透光率和电阻率的影响。结果表明：基片温度影响膜的载流子浓度，霍尔迁移率以及膜的结晶程度。当基片温度为１５００Ｃ附近时所沉积的膜具有较高的载流子浓度和迁移率，因而电阻率最低，而且结晶良好，具有高的透光率。试验中还研究了加热退火对膜性能的影响。结果表明：后处理（加热退火）的效果与成膜时的基片温度有密切关系。在低基片温度下沉积的膜经过后处理其透光率得到较大改善但电阻率有所上升，在高基片温度下沉积的膜经过后处理其导电和透光性能都变差。存在一个适中的基片温度区，在该温度下采用直流辉光等离子体辅助反应蒸发法可以不必进行后处理，直接沉积出性能良好的ＩＴＯ透明导电膜。
An ITO transparent conductive film was deposited using a DC glow plasma assisted reactive evaporation method. The influence of the substrate temperature on the transmittance and the resistivity of the film was studied in detail by measuring the Hall coefficient of the film, XRD and SEM. The results show that the substrate temperature affects the carrier concentration, the Hall mobility and the crystallinity of the film. The films deposited when the substrate temperature is in the vicinity of 1500C have higher carrier concentration and mobility, and thus have the lowest resistivity, good crystallinity, and high light transmittance. The effect of heating annealing on the film properties was also studied. The results show that the effect of post-treatment (heating annealing) is closely related to the substrate temperature during film formation. After the film deposited at low substrate temperature, the light transmittance of the deposited film is greatly improved but the resistivity is increased. After the film deposited at a high substrate temperature, the electrical and optical properties of the deposited film deteriorate. There is a moderate temperature zone of the substrate at which direct-flow glow plasma-assisted reactive evaporation can be used to directly deposit a good-quality ITO transparent conductive film without post-processing.