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本文分析了一个单量子阱的随频率变化的Ｇ－Ｖ特性，提出用电导法测量量子阱的能带偏移．通过对一个Ｓｉ１－ｘＧｅｘ／Ｓｉ单量子阱的实验Ｇ－Ｖ曲线的分析，验证了这一方法的可靠性
In this paper, the G-V characteristics of a single quantum well with frequency variation are analyzed, and the band offset of the quantum well is proposed by the conductivity method. The experimental G-V curve of an Si1-xGex / Si single quantum well was analyzed to verify the reliability of this method