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生长温度对SiGe合金的性能有重要影响.在双腔超高真空化学气相淀积生长中,通常采用液氮冷却的方法.该生长模式下,通入乙硅烷时腔内的生长气压约为10-5Pa,SiGe的最低生长温度约为550℃.为了降低生长温度,文中采用了不用液氮冷却的模式,腔内生长气压约为10-2Pa,增加3个数量级,并且将生长温度降到了485℃,远低于传统的生长温度.DCXRD测试和TEM图像表明,生长的SiGe薄膜和SiGe/Si超晶格具有良好的晶格质量.结果证明,在UHV/CVD系统中,这是一种有效的实现SiGe低温生长的方法.
The growth temperature has an important influence on the performance of SiGe alloy.In the dual-chamber ultra-high-vacuum chemical vapor deposition growth, the method of liquid nitrogen cooling is usually adopted.In this growth mode, the growth pressure in the chamber is about 10 -5Pa, the minimum growth temperature of SiGe is about 550 ℃ .In order to reduce the growth temperature, the paper adopts a mode without liquid nitrogen cooling, the growth pressure in the chamber is about 10-2Pa, increasing by 3 orders of magnitude, and the growth temperature is reduced to 485 ℃, much lower than the traditional growth temperature.DCXRD test and TEM images show that the growth of SiGe film and SiGe / Si superlattice have good lattice quality.The results show that in the UHV / CVD system, which is an effective The method of achieving SiGe low temperature growth.