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本文提出了电子轰击硅靶光电子特性的光学模拟法。用简易的蓝光摄象装置可取代价格昂贵的灵敏度测试装置,且有不可取代的优点。本文提出的理论与实验数据有很好的吻合。
In this paper, the optical simulation of the photoelectron properties of silicon by electron bombardment is proposed. With a simple blue imaging device can replace the expensive sensitivity test device, and there are irreplaceable advantages. The theory proposed in this paper is in good agreement with the experimental data.