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本文报道了在不同热处理条件下P型含氮CZ-Si单晶材料的退火性质。实验表明:400℃及1100℃温度的退火处理都会在含氮CZ-Si单晶中产生新的施主态。400℃退火时产生的施主态会在高温(T>600℃)退火时迅速消灭,它与单晶中N-O复合体的生成和生长机制有关;1100℃退火时产生的施主态则与材料中的氮沉淀有关。
In this paper, the annealing properties of P-type nitrogen-containing CZ-Si single crystal materials under different heat treatment conditions are reported. Experiments show that: 400 ℃ and 1100 ℃ annealing temperature will produce a new donor state in the nitrogen-containing CZ-Si single crystal. The donor state generated at 400 ℃ annealed rapidly disappears when annealed at high temperature (T> 600 ℃), which is related to the formation and growth mechanism of NO complex in single crystal. The donor state produced at 1100 ℃ anneals is similar to that of Nitrogen precipitation related.