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采用离子束溅射技术交替沉积Sb-Te-Sb多层薄膜后进行高真空热处理,直接制备Sb2Te3薄膜.利用X射线衍射(XRD)仪、霍尔系数测试仪、薄膜Seebeck系数测量系统对所制备的薄膜特性进行表征.XRD测量结果显示,薄膜的主要衍射峰与Sb2Te3标准衍射峰相同,在[101]/[012]晶向取向明显,存在较多的Te杂质峰;霍尔系数测试结果表明,薄膜为p型半导体薄膜,薄膜电阻率较低,其电导率接近于金属电导率,载流子浓度量级为1023cm-3,具有良好的电学性能;Seebeck系数测量结果显示,薄膜具有良好的热电性能,在不同条件下制备的薄膜的Seebeck系数在7.8—62μV/K范围;在所制备的薄膜中,退火时间为6h、退火温度为200℃的薄膜其Seebeck系数达到最大,约为62μV/K,且电阻率最小.
The Sb-Te-Sb multilayer films were alternately deposited by ion beam sputtering and then annealed under high vacuum to produce Sb2Te3 thin films directly. The prepared Sb2Te3 thin films were characterized by X-ray diffraction (XRD), Hall coefficient tester and thin film Seebeck coefficient measurement system XRD measurement results show that the main diffraction peak of the film is the same as the standard diffraction peak of Sb2Te3, with obvious orientation in [101] / [012] crystal orientation and more Te impurity peaks. The Hall coefficient test results show that , The film is a p-type semiconductor thin film, the resistivity of the film is low, the conductivity is close to the metal conductivity, the carrier concentration level is 1023cm-3, has good electrical properties; Seebeck coefficient measurement results show that the film has good The Seebeck coefficient of films prepared under different conditions was in the range of 7.8-62 μV / K. In the prepared films, the annealing time was 6 h, the annealing temperature was 200 ℃, the maximum Seebeck coefficient of the films was about 62 μV / K, and the lowest resistivity.