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研究开发了0.4μm PD CMOS/SOI工艺,试制出采用H栅双边体引出的专用电路。对应用中如何克服PD SOI MOSFET器件的浮体效应进行了研究;探讨在抑制浮体效应的同时减少对芯片面积影响的途径,对H栅双边体引出改为单边体引出进行了实验研究。对沟道长度为0.4μm、0.5μm、0.6μm、0.8μm的H栅PD SOI MOSFET单边体引出器件进行工艺加工及测试,总结出在现有工艺下适合单边体引出方式的MOSFET器件尺寸,并对引起短沟道PMOSFET漏电的因素进行了分析,提出了改善方法;对提高PD CMOS/SOI集成电路的设计密度和改进制造工艺具有一定的指导意义。
Research and development of the 0.4μm PD CMOS / SOI process, trial production of the H gate bilateral body leads to a dedicated circuit. How to overcome the buoyancy effect of PD SOI MOSFET device is discussed in the application. The way to reduce the influence on the chip area while suppressing floating body effect is discussed. The H-gate PD SOI MOSFET unilateral body lead-out device with channel length of 0.4μm, 0.5μm, 0.6μm and 0.8μm is processed and tested, and the size of the MOSFET device suitable for the unilateral body pull-out mode in the prior art is summarized , And analyzes the factors which cause the leakage of short-channel PMOSFET. The improvement methods are proposed. It is of guiding significance to improve the design density and improve the manufacturing process of PD CMOS / SOI integrated circuits.