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对１．５５μｍ波长的Ｓｉ１－ｘＧｅｘ光波导开关和Ｓｉ１－ｘＧｅｘ／Ｓｉ红外探测器的集成结构进行了系统的理论分析和优化设计。设计结果为：（１）对Ｓｉ１－ｘＧｅｘ光开关，Ｇｅ含量ｘ＝０．０５，波导的内脊高、脊宽和腐蚀深度分别为３，８．５和２．６μｍ，分支角为５～６°。要实现对１．５５μｍ波长光的开关作用，ｐｎ＋结上所需加的正向偏压值应为０．９７Ｖ；（２）对Ｓｉ１－ｘＧｅｘ／Ｓｉ探测器，Ｇｅ含量ｘ＝０．５，探测器由２３个周期的６ｎｍＳｉ０．５Ｇｅ０．５和１７ｎｍＳｉ交替组成厚度为５５０ｎｍ，长度约为１．５～２ｍｍ的超晶格，内量子效率达８０％以上。
The integrated structure of Si1-xGex optical waveguide switch and Si1-xGex / Si infrared detector with 1.55μm wavelength is systematically analyzed and optimized. The design results are as follows: (1) For the Si1-xGex optical switch, the Ge content is x = 0.05. The waveguide internal ridge height, ridge width and corrosion depth are 3, 8.5 and 2.6 μm, 6 °. In order to achieve the switching function of 1.55μm wavelength light, the forward bias value required on the pn + junction should be 0.97V; (2) For the Si1-xGex / Si detector, the Ge content x = 0.5, The detector consists of 23 periods of 6nmSi0.5Ge0.5 and 17nmSi alternately composed of superlattices with a thickness of 550nm and a length of about 1.5 ~ 2mm, the internal quantum efficiency of more than 80%.