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在短波红外区域(1～3μm),硅薄膜材料因其具有折射率高、透明性好、膜层应力易匹配等诸多优点而得到广泛应用。基于改进后的Sellmeier模型拟合出了制备的硅薄膜的短波红外光学特性,以此为基础,选用硅和二氧化硅两种材料,设计并制备出中心波长在1.30μm,相对带宽2.46%的带通滤光片。利用了硅薄膜在波长小于1.0μm波段的吸收特性较好地扩展了带外截止范围。测量结果表明,具有2个谐振腔的带通滤光片峰值透射率达到85.8%,半功率带宽控制在约32nm,带外截止范围覆盖了波长小于1.75μm的光谱区域。
In the shortwave infrared region (1 ~ 3μm), silicon thin film material is widely used because of its many advantages such as high refractive index, good transparency, easy to match the stress of the film. Based on the improved Sellmeier model, the shortwave infrared optical properties of the prepared silicon thin films were fitted. Based on this, the silicon and silicon dioxide materials were selected to design and prepare the center wavelength of 1.30μm and the relative bandwidth of 2.46% Bandpass filter. The use of a thin film of silicon in the wavelength of less than 1.0μm band of the absorption characteristics of the extended out of band band better. The measurement results show that the bandpass filter with two resonators has a peak transmittance of 85.8% and a half-power bandwidth of about 32 nm, and the out-of-band range covers the spectral region of wavelengths less than 1.75 μm.