论文部分内容阅读
随着大规模集成电路的高集成化及加工条宽的微细化,出现了各种用自对准技术实现布线接触。这种方法仅用一块掩模就可自动形成扩散区和布线间的接触,而且还可形成层间隔离。它可排除予料的掩模套准偏移的余度部分(即多余部分的面积)。这一技术已经应用于批量生产的高速双极大规模集成电路中,而在MOS大规模集成电路中能否应用的问题尚处在研究阶段,这是由于目前还未发现它能克服可靠性等不良因素等优点。
With the high integration of large scale integrated circuits and the miniaturization of the processing width, a variety of wiring contacts have emerged using self-alignment techniques. This method automatically forms the contact between the diffusion region and the wiring with only one mask, and can also form interlayer isolation. It excludes the margin (ie, the area of the excess portion) of the registered mask registration offset. This technology has been used in mass production of high-speed bipolar LSIs, and the application of MOS large-scale integrated circuits is still in the research stage, because it has not been found to overcome the reliability and so on Adverse factors such as the advantages.