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据日本《O Plus E》1992年第147期报道,美国AT&T贝尔研究所已开发世界上最小的半导体激光器。这种器件像“图钉”那样立在硅衬底上,器件的顶部直径为5μm,厚度只有0.1μm。该研究所计划把这种器件应用于光计算机元件和人工网膜等的新图像处理技术。像“图
According to Japan’s “O Plus E” 1992 No. 147 reported that the United States AT & T Bell Institute has developed the world’s smallest semiconductor laser. The device stands like a “pin” on a silicon substrate with a top diameter of 5μm and a thickness of only 0.1μm. The institute plans to apply the device to new image processing technologies such as optical computer components and artificial retina. Like "figure