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本文研究和分析具有偏置栅又有延伸源场板的MOS和双极型高压复合结构中产生可控硅效应的机理,提出如何从材料、几何结构和工艺参数方面采取措施抑制和防止可控硅效应的产生.
This paper studies and analyzes the mechanism of SCR generated in MOS and bipolar high-voltage composite structure with offset gate and extended source field plate, and proposes how to take measures to prevent and controllable from material, geometry and process parameters Silicon effect generation.