相较于传统的硅器件,基于宽禁带半导体材料的功率电子器件在很多方面都体现出了优越的性能,符合功率变换器高效率、高工作温度及高功率密度的发展需求。近几年来,碳化硅(SiC)和氮化镓(GaN)功率器件的制造技术发展迅速,多家公司推出了系列商业化产品,宽禁带功率电子器件及其 Compared with traditional silicon devices, power electronics based on wide-bandgap semiconductors have demonstrated superior performance in many ways, in line with the development of high efficiency, high operating temperature and high power density of power converters. In recent years, the manufacturing technology of silicon carbide (SiC) and gallium nitride (GaN) power devices has been rapidly developed. A number of companies have introduced a series of commercial products, wide band gap power electronic devices and their