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本文描述双极场引晶体管(BiFET)短沟道解析理论,用解析理论分别计算飘移扩散电流.上月文章用单项电化电流描述飘移扩散电流.正如那篇文章里,两维晶体管分成两个区域,源区和漏区.每区在特定外加端电压下既可为电子或空穴发射区又可为电子或空穴收集区.把两维无缺陷Shockley方程分离为两个以表面势为参变量的一维方程,并运用源区和漏区界面处电子电流和空穴电流连续性,得到在源区和漏区内解析方程.典型BiFET包括薄纯基上两个等同金属氧化物硅( MOS)栅.用图形提供实用硅基和氧化层厚度范围内,随直流电压变化,输出和转移电流和电导总量,电子沟道与空穴沟道飘移扩散分量,和两区电学长度.描述两区短沟道理论相对一区长沟道理论偏差.
This article describes the short-channel bi-polar field-effect transistor (BiFET) theory and uses analytical theory to calculate the diffusional diffusional currents, respectively. Last month, the article described monomial electrochemical currents as diffusive diffusive currents. As in that article, the two-dimensional transistor is divided into two regions , Source region and drain region.Each region can be either electron or hole emitting region and electron or hole collecting region at a specific external voltage.The two-dimensional defect-free Shockley equation can be separated into two parts Variable one-dimensional equations and using the continuity of the electron current and the hole current at the source and drain interface to obtain the analytical equations in the source and drain regions. A typical BiFET includes two equivalent metal oxide silicon (MOS) Grid. Graphically provides practical silicon-based and oxide thickness ranges with varying DC voltage, total output and transfer current and conductance, drift-diffusion components of the electron channel and hole channel, and the electrical length of the two regions. Short channel theory relative to a district long channel theory deviation.