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MoS2 /Ti复合膜由直流磁控溅射方法制备 ,膜中Ti的原子分数x(Ti)和硬度Hv 随着Ti靶溅射电流I(Ti)的增加而增加 .FE SEM (场发射扫描电子显微镜 )对膜表面形貌观察发现 ,MoS2 /Ti复合膜是由尺寸为几十到几百nm的颗粒组成 ,膜的致密性和膜中x(Ti)有关 ,x(Ti)越高 ,膜的致密性越好 ,从而膜的Hv 也就越高 .偏压Ub 是影响膜性能的重要因素 ,随着Ub 的增加 ,膜的Hv 也增加 ,当Ub=- 10 0V时 ,膜的Hv 达到峰值 ;进一步增加Ub,膜的Hv 则下降 .
The MoS2 / Ti composite films were prepared by DC magnetron sputtering. The atomic fraction of Ti (Ti) and hardness (Hv) of Ti films increased with the Ti target sputtering current (Ti) Microscopy) The surface morphology of the films was observed. The MoS2 / Ti composite films consisted of particles with size ranging from tens to hundreds of nm. The compactness of the film was related to x (Ti) in the film. The higher the value of x The higher the Hv of the film is, the higher the Hv of the film is, and the bias Ub is an important factor affecting the film performance. As the Ub increases, the Hv of the film also increases. When Ub = -100V, the Hv of the film reaches Peak; further increase Ub, Hv membrane decreased.