Surface acoustic wave(SAW) resonators with Pt/AlN/Si and Pt/AlN/Pt/Si configurations were fabricated by lift-off photolithography techniques. High-temperature performances of both configurations were investigated for temperature sensor applications. AlN films grown on Ptcoated Si substrates exhibit a lower(002) preferred orientation than those grown on Si substrates. The center frequencies of Pt/AlN/Si and Pt/AlN/Pt/Si configurations at room temperature are 424.1 and 456.4 MHz, respectively.The SAW was limited by Pt bottom electrodes to propagate in AlN layer. The temperature coefficient of frequency(TCF) values of Pt/AlN/Si and Pt/AlN/Pt/Si configurations are-51.6 9 10~(-6) and-69.2 9 10~(-6)°C~(-1), respectively.Compared with that of Pt/AlN/Si configuration, the TCF value of Pt/AlN/Pt/Si configuration decreases by 34.1 %.AlN resonator with the Pt floating bottom electrodes provides a large, quasi-constant temperature sensitivity which is suitable for temperature sensor applications. Surface acoustic wave (SAW) resonators with Pt / AlN / Si and Pt / AlN / Pt / Si configurations were fabricated by lift-off photolithography techniques. High-temperature performances of both configurations were investigated for temperature sensor applications. The center frequencies of Pt / AlN / Si and Pt / AlN / Pt / Si configurations at room temperature are 424.1 and 456.4 MHz, respectively. SAW was limited The temperature coefficient of frequency (TCF) values ​​of Pt / AlN / Si and Pt / AlN / Pt / Si configurations are -51.6 9 10 -6 and 69.2 9 10 ~ (-6) ° C ~ (-1), respectively. Compared with that of Pt / AlN / Si configuration, the TCF value of Pt / AlN / Pt / provides a large, quasi-constant temperature sensitivity which is suitable for temperature sensor applications.