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利用等离子体增强化学气相沉积方法在单晶硅衬底上制备出非晶氮氧化硅(a-SiNxOy)薄膜。基于结构表证、光致发光(PL)光谱、温度依赖性PL光谱和光致激发(PLE)光谱,对aSiNxOy薄膜中局域态激子的发光性能进行了详细的研究。傅里叶红外吸收光谱(FTIR)和X射线光电子能谱(XPS)实验结果证实了a-SiNxOy薄膜中存在O—Si—N键合结构;PLE和PL峰位之间存在0.92 eV的斯托克斯漂移,表明a-SiNxOy薄膜室温可见发光主要起源于局域态激子的辐射复合;实验和理论计算结果表明,a-SiNxOy薄膜室温PL主要起源于与Si—O—Si和O—Si—N相关的局域态激子的辐射复合。
Amorphous silicon oxynitride (a-SiNxOy) films were deposited on single crystal silicon substrates by plasma-enhanced chemical vapor deposition. The luminescent properties of localized excitons in aSiNxOy films have been studied in detail based on the structure-evidences, photoluminescence (PL) spectra, temperature-dependent PL spectra and photoluminescence (PLE) spectra. The results of Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) confirmed the existence of O-Si-N bonding structure in a-SiNxOy thin films. There was 0.92 eV Sto X-ray diffraction shows that the a-SiNxOy thin film at room temperature can be seen mainly from the radiative recombination of localized excitons. The experimental and theoretical calculations show that the PL at room temperature of a-SiNxOy thin films mainly originates from Si-O-Si and O-Si -N-related local excitons.