论文部分内容阅读
通过同时调节同一有源区内不同阱层和垒层的In组分,制备了GaN基单有源区蓝、绿光双波长发光二极管(LED).实现了20mA下蓝、绿光同时发射.实验发现随注入电流由10mA增大到60mA,电致发光(EL)谱中绿光峰强度相对于蓝光峰强度不断增强,峰值波长蓝移也更加明显.同时考虑极化效应和载流子不均匀分布的影响,通过对一维薛定谔方程、稳态速率方程和泊松方程的联立自洽求解.分析了测试电流下蓝、绿光EL谱峰值波长和功率的变化情况.发现理论结果与实验结果有很好地符合.
The GaN-based single-source blue and green dual-wavelength LEDs were fabricated by simultaneously adjusting the In composition of different well and barrier layers in the same active region, and the simultaneous blue and green emission at 20 mA was achieved. The experimental results show that as the injection current increases from 10mA to 60mA, the intensity of the green peak in the electroluminescence (EL) spectrum increases with respect to the intensity of the blue peak, and the blue wavelength shift of the peak wavelength becomes more pronounced. Considering the polarization effect and the carrier Uniform distribution, the simultaneous and self-consistent solution to the one-dimensional Schrödinger equation, steady-state rate equation and Poisson equation is used to analyze the change of the peak wavelength and power of the blue and green EL spectra under the test current. The theoretical results and experimental results The results fit well.