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用常压金属化学气相沉积法(MOCVD)在Si(111)衬底上制备了马赛克结构ZnO单晶薄膜。引入低温Al N缓冲层以阻止衬底氧化、缓解热失配和晶格失配。薄膜双晶X射线衍射2θ/ω联动扫描只出现了Si(111)、ZnO(000l)及Al N(000l)的衍射峰。ZnO/Al N/Si(111)薄膜C方向晶格常量为0.5195nm,表明在面方向处于张应力状态;其对称(0002)面和斜对称(1012)面的双晶X射线衍ω摇摆曲线半峰全宽分别为460″和1105″;干涉显微镜观察其表面有微裂纹,裂纹密度为20cm-1;3μm×3μm范围的原子力显微镜均方根粗糙度为1.5nm;激光实时监测曲线表明薄膜为准二维生长,生长速率4.3μm/h。低温10K光致发光光谱观察到了薄膜的自由激子、束缚激子发射及它们的声子伴线。所有结果表明,采用金属化学气相沉积法并引入Al N为缓冲层能有效提高Si(111)衬底上ZnO薄膜的质量。
Mosaic structure ZnO single crystal thin films were prepared on Si (111) substrates by atmospheric pressure metal chemical vapor deposition (MOCVD). A low temperature Al N buffer layer is introduced to prevent oxidation of the substrate, mitigating thermal mismatch and lattice mismatch. Only the diffraction peaks of Si (111), ZnO (000l) and Al N (000l) appeared in the 2θ / ω scanning electron microscopy. The lattice constant in the C direction of ZnO / Al N / Si (111) thin films is 0.5195 nm, indicating that the plane strain is in the tensile state. The twin crystal X-ray diffraction ω rocking curves of the symmetry (0002) plane and the oblique symmetry The full width at half maximum (FWHM) was 460 “and 1105”, respectively. The interference microscopy showed micro cracks on the surface and the crack density was 20cm-1. The root mean square roughness of AFM in the range of 3μm × 3μm was 1.5nm. Quasi-two-dimensional growth, the growth rate 4.3μm / h. The free-exciton, bound exciton emission and their phonon chalazion of thin films were observed at low temperature 10K photoluminescence spectra. All the results show that the quality of ZnO thin films on Si (111) substrate can be effectively improved by adopting metal chemical vapor deposition and introducing AlN as buffer layer.