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首次报道采用脉冲激光沉积方法在 ( 1 0 0 )LaAlO3 单晶基底上外延生长La Sn Mn O薄膜 ,由X射线的衍射分析确定薄膜属于钙钛矿型结构 .薄膜在低温发生金属到半导体转变 ,它的电阻随磁场的变化而变化 ,其磁阻的最大变化率约为 1 0 3 ,表明此薄膜具有异常大磁阻效应 .磁化强度的测量表明其室温为顺磁性低温为铁磁性 .居里温度值与薄膜出现最大磁阻变化率的温度值十分接近 ,表明其中的磁阻效应是与铁磁到顺磁转变紧密相连的 .为进一步探讨La Sn Mn O在将来集成薄膜器件中的应用前景 ,测量了薄膜表面的平整度 .
For the first time, LaSnO thin films were epitaxially grown on a (100) LaAlO3 single crystal substrate by pulsed laser deposition, and the film was determined to be of perovskite structure by X-ray diffraction analysis. The film was changed from metal to semiconductor at low temperatures, Its resistance changes with the magnetic field changes, the maximum rate of change of the magnetoresistance is about 103, indicating that the film has a large magnetoresistance effect.Measurement of magnetization shows that its room temperature is paramagnetic low temperature ferromagnetic. Curie The temperature value is close to that of the maximum rate of change of magnetoresistance, indicating that the magnetoresistive effect is closely related to the transition from ferromagnetic to paramagnetic.In order to further explore the application prospect of LaSnMnO in future integrated thin film devices , The flatness of the film surface was measured.