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由长沙半导体工艺设备研究所研制的LC-4型600keV高能离子注入机,于今年八月在重庆光电技术研究所安装调试。这台机器设计合理,性能稳定,使用效率高,适用范围广,操作维修方便。目前机器工作正常,已为科研和生产服务。LC-4型高能机结构上采用先分析后加速、离子源和磁分析器处于高电位靶室接地类型,头部用隔离变压器供电,用光缆实现高压舱与控制室之间所有电控信号的联通。用微光电视观察束斑,实现远台操作。机器现配有室温靶室,八个靶位,自动换靶。尚留有四个离子通
The LC-4 600keV high-energy ion implanter developed by Changsha Semiconductor Process Equipment Institute was installed and commissioned by Chongqing Optoelectronics Technology Research Institute in August this year. This machine design is reasonable, stable performance, high efficiency, wide range of applications, easy operation and maintenance. Currently the machine is working properly and has been serving research and production. LC-4 high-energy machine structure using the first post-analysis acceleration, ion source and magnetic analyzer in the high potential target room ground type, the head with isolation transformer power supply, with cable to achieve high voltage cabin and control room between all electronic control signals Unicom. Observe the beam spot with the glimmer TV, realize the distant operation. The machine is equipped with room temperature target chamber, eight target, automatic target change. There are still four ion pass